Micron Technology DRAM SDRAMMobile-, Part #: MT41J64M16TW-093:J | Dynamic random access memory | DEX
Micron Technology DRAM SDRAMMobile-, Part #: MT41J64M16TW-093:J | Dynamic random access memory | DEX
-70% Off$1.88
Description
Micron Technology DRAM SDRAM-DDR3, Part #: MT41J64M16TW-093:J features: • VDD = VDDQ = 1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Programmable CAS READ latency (CL) • POSTED CAS ADDITIVE latency (AL) • Programmable CAS WRITE latency (CWL) based on tCK • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) • Selectable BC4 or BL8 on-the-fly (OTF) • Self refresh mode • TC of 0°C to 95°C – 64ms, 8192 cycle refresh at 0°C to 85°C – 32ms, 8192 cycle refresh at 85°C to 95°C • Self refresh temperature (SRT) • Automatic self refresh (ASR) • Write leveling • Multipurpose register • Output driver calibration
MIL:MT41J64M16TW-093 J
MT41J64M16TW-093:J
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